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| Datasheet File OCR Text: |
| ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: * * * OmnigoldTM Metalization System B A 45 D C J MAXIMUM RATINGS E I IC VCBO VCEO VCES VEBO PDISS TJ TSTG JC O 2.5 A 36 V 16 V 36 V 4.0 V 58 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 7.0 OC/W O O O O DIM A B C D E F G H I J K F G H K MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.24 ORDER CODE: ASI10682 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICEO ICES hFE Cob PG C IC = 20 mA IC = 25 mA IE = 10 mA VCB = 15 V TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 16 36 4.0 2.0 3.0 UNITS V V V mA mA --pF dB VCE = 10 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V POUT = 10 W IC = 1.0 A f = 1.0 MHz f = 470 MHz 7.0 60 10 --25 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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